By C.V. Shank and B.P. Zakharchenya (Eds.)
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4. Those with the smaller q(6 χ 10 c m ) exhibit an exponential decay, immediately after the end of the excitation, 5 with a characteristic decay time of 7 ps. At intermediate g's (8 χ 10 and 5 1 10 χ 10 c m " ) the phonon distribution decays much faster at short times (up to 5 and 8 ps delay), approaching then the exponential behavior. The amplification of these large-g phonons is not as pronounced as that of the small-g ones. The time evolution of the phonon distribution reflects the microscopic details of the cooling processes in the coupled electron-phonon system.
26. 5 1 q (10 c m " ) ) Fig. 25. L O phonon distribution for Γ-valley electron in GaAs (a) and InP (b) for three different time delays after the excitation at TL = 300 K. 05 \i I 0 ι ι 2 ι ι 4 ι ι ι 6 ι 8 ι , 10 ι i_ 12 t (PS) Fig. 26. Time evolution of the Raman-active modes for two different temperatures. A. Kash et al. (1985) are shown in the inset. 42 P. Lugli which is a direct evidence of the slow-return of the electrons from the upper valleys. Such features are related to the fact that, within the spherical model for the upper valleys, phonons are emitted there with wavevectors outside the Raman-active area.
The M C histogram (fig. 11a) confirms that the emission of L O phonons by L-valley electrons is concentrated in the large-g region. The actual number of phonons reflects indeed the relative population of the two valleys. Nevertheless, the effect of those phonons on the perturbed distibution (fig. l i b ) is negligible. Furthermore, all of the L-valley phonon have q values too large to be detected spectroscopically. We can, therefore, expect that the phonon amplifications experimentally detected would decrease in the presence of substantial intervalley transfer.