By Tetsuro Seiyama
The themes selected for this moment quantity were conscientiously chosen via the foreign editorial board to hide new, vital growth during this fast-developing box. With contributions from many fashionable researchers operating on the frontiers of the chemical sensor box, the booklet presents up to date details and thought to all readers
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Extra info for Chemical Sensor Technology. Volume 2
27) Although the overwhelming research and development effort has concentrated on Pd-gate structures for sensing hydrogen or hydrogen-bearing gases, other gases can, in principle, be detected using other gate materials, other I layers, other configurations, and/or selective membranes. 26) In summarizing the response of the Pd-gate hydrogen diode sensors, we note that the sensor structure with an additional sensing layer TiO* is the most sensitive structure for hydrogen detection. The MIM heterostructure diode with an LPCVD-TiO* I layer, in particular, yields the highest hydrogen sensitivity to ppm hydrogen in oxygen at RT so far reported in the literature.
These advantages will be exploited only if the substrate geometry and the materials used fulfill the thermomechanical stability requirements and the proper isolating properties. 13"16) For the thermally isolated structure the following elements must be designed, considering the operating conditions : • the heating element • the electrical isolation between the heater and the sensitive film • the electrical contact pads • the thermal isolation between the heating element and the mechanical base.
Lalevic, IEEE Trans. Electron Devices, ED-29, 123 (1982). P. F. Ruths, S. Ashok, S. J. Fonach, J. M. Ruths, IEEE Trans, Electron. Devices, ED-28, 1003 (1981) S. J. Fonash, Z. Li, M. J. O' Leary, / . Appl. Phys. , 58 (11) , 4415 (1985) . Z. Li, S. J. Fonash, IEEE Intl. Device Meeting, Washington, DC, December 1985. S. J. Fonash, Z. Li, in : Fundamentals and Application of Chemical Sensors. (D. Schwetzle and R. ), American Chemical Society, Washington, DC, 177-202 (1986). N. Yamamoto, S. Tonomura, T.